agp15-400 thru agp15-800 document number 88535 14-oct-05 vishay general semiconductor www.vishay.com 1 do-204ac (do-15) p a t e n t e d * ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602 of 1976; brazed-lead assembly by patent no. 3,930,306 of 1976 and glass composition by patent no. 3,752,701 of 1973 glass passivated junction plastic controlled avalanche rectifier major ratings and characteristics i f(av) 1.5 a v rrm 400 v to 800 v p rm 500 w i fsm 50 a i r 5.0 a v f 1.1 v t j max. 175 c features superectifier struct ure for high reliability application cavity-free glass-passivated junction controlled avalanche characteristics low forward voltage drop low leakage current, i r less than 0.1 a high forward surge capability meets environmental standard mil-s-19500 solder dip 260 c, 40 seconds typical applications for use in general purpose rectification of power sup- plies, inverters, converters and freewheeling diodes application mechanical data case: do-204ac, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol agp15-400 agp15-600 agp15-800 unit maximum recurrent peak reverse voltage v rrm 400 600 800 v maximum rms voltage v rms 280 420 560 v maximum dc blocking voltage v dc 400 600 800 v maximum peak power dissipation in the avalanch region 20 s pulse p rm 500 w max. average forward rectified current 0.375" (9.5 mm) lead lengths at t a = 55 c i av 1.5 a peak forward surge current 8.3 ms single half sine- wave superimposed on rated load i fsm 50 a maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at t a = 55 c i r(av) 100 a operating and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88535 14-oct-05 agp15-400 thru agp15-800 vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol agp15-400 agp15-600 agp15-800 unit minimum avalanche breakdown voltage at 100 a v br 450 675 880 v maximum avalanche breakdown voltage at 100 a v br 750 1000 1200 v maximum instantaneous forward voltage at 1.5 a v f 1.1 v maximum reverse current at rated dc blocking voltage i r 5.0 a typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 2.0 s typical junction capacitance at 4.0 v, 1 mhz c j 15 pf parameter symbol agp15-400 agp15-600 agp15-800 unit typical thermal resistance (1) r ja 25 c/w figure 1. maximum forward current derating curve 0 0.75 1.0 1.5 25 50 75 100 125 150 175 a v erage for w ard rectified c u rrent (a) am b ient temperat u re (c) 0.5 0.25 1.25 single phase half w a v e 60 hz resisti v eorind u cti v e load 0.375" (9.5mm) lead length figure 2. typical instantaneous forward characteristics 0.1 instantaneo u sfor w ard c u rrent (a) instantaneo u sfor w ard v oltage ( v ) 10 0.6 0.4 0. 8 1.0 1.2 1.4 1.6 0.01 1.0 t j = 25 c p u lse w idth = 300 s 2% d u ty cycle
agp15-400 thru agp15-800 document number 88535 14-oct-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. maximum non-repetitiv e peak forward surge current figure 4. maximum non-repetit ive reverse avalanche power dissipation nu m b er of cycles at 60 hz 10 100 1 peak for w ard s u rge c u rrent (a) 1 10 100 t a = 55 c 8 .3 ms single half sine- w a v e 020 60 40 100 8 0 percent of rated peak re v erse v oltage (%) 0.01 0.1 10 1 instantaneo u s re v erse leakage c u rrent ( a) t j = 125 c t j = 25 c t j = 75 c figure 5. typical revers e leakage characteristics p u lse d u ration ( s) peak re v erse a v alanche po w er ( w ) 10 100 1000 10000 10 100 1000 t j = 25 c 0.034 (0.86) 0.028 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 0.230 (5.8) 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. do-204ac (do-15)
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